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BAS16WH6327XTSA1

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BAS16WH6327XTSA1

DIODE GEN PURP 80V 250MA SOT323

Manufacturer: Infineon Technologies

Categories: Single Diodes

Quality Control: Learn More

Infineon Technologies BAS16WH6327XTSA1 is a General Purpose Diode with a maximum reverse voltage of 80 V and an average rectified current of 250 mA. This device features a fast recovery time of 4 ns, characteristic of speeds greater than 200 mA (Io). Its forward voltage (Vf) is a maximum of 1.25 V at 150 mA, with a reverse leakage current of 1 µA at 75 V. The diode exhibits a capacitance of 2 pF at 0 V and 1 MHz. The BAS16WH6327XTSA1 is available in a PG-SOT323 (SC-70) package, suitable for surface mount applications. It operates across a junction temperature range of -55°C to 150°C. This component is commonly utilized in Switching Power Supplies, Telecommunications, and Industrial Automation sectors. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4 ns
TechnologyStandard
Capacitance @ Vr, F2pF @ 0V, 1MHz
Current - Average Rectified (Io)250mA
Supplier Device PackagePG-SOT323
Operating Temperature - Junction150°C (Max)
Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
Current - Reverse Leakage @ Vr1 µA @ 75 V

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