BAS16WE6327HTSA1
DIODE GEN PURP 80V 250MA SOT323Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies BAS16WE6327HTSA1 is a general-purpose diode with a maximum reverse voltage of 80 V and an average rectified current of 250 mA. This device features a fast recovery time of 4 ns, suitable for applications requiring rapid switching. The forward voltage drop is a maximum of 1.25 V at 150 mA. With a junction operating temperature up to 150°C, it is designed for reliability. The component is housed in a PG-SOT323 (SC-70) surface-mount package, supplied on tape and reel. Its low reverse leakage current of 1 µA at 75 V and minimal capacitance of 2 pF at 0 V make it a robust choice for various electronic designs, including telecommunications and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | PG-SOT323 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |
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