BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies BAS16E6393HTSA1 is a general-purpose switching diode. This AEC-Q101 qualified component features a maximum reverse voltage of 80 V and a forward voltage drop of 1.25 V at 150 mA. It offers a rectified average forward current of 250 mA and a reverse leakage current of 1 µA at 75 V. With a fast reverse recovery time of 4 ns, this diode is suitable for applications requiring rapid switching. The component has a junction operating temperature range up to 150°C and a capacitance of 2 pF at 0 V and 1 MHz. Packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) for surface mounting, this device is commonly utilized in automotive applications, including signal switching and rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | PG-SOT23 |
| Operating Temperature - Junction | 150°C (Max) |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |
| Qualification | AEC-Q101 |
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