BAL99E6433HTMA1
DIODE GEN PURP 80V 250MA SOT23Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies BAL99E6433HTMA1 is a general-purpose diode designed for high-speed switching applications. This surface-mount component, packaged in a PG-SOT23, offers a reverse voltage rating of 80V and an average rectified current capability of 250mA. Featuring a fast recovery time of 4ns, it minimizes switching losses, making it suitable for power supply circuits, signal rectification, and high-frequency applications. The diode exhibits a forward voltage drop of 1.25V at 150mA and a low reverse leakage current of 1µA at 70V. Its operating junction temperature range is -65°C to 150°C. This device finds application in consumer electronics, industrial automation, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | PG-SOT23 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 70 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
