BAL99E6327HTSA1
DIODE GEN PURP 80V 250MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies BAL99E6327HTSA1 is a general-purpose diode with a maximum DC reverse voltage of 80 V and an average rectified forward current of 250 mA. Featuring a fast recovery time of 4 ns, this component is suitable for applications requiring rapid switching characteristics. The forward voltage drop at 150 mA is a maximum of 1.25 V. With a low reverse leakage current of 1 µA at 70 V and a junction capacitance of 1.5 pF at 0 V and 1 MHz, it offers efficient performance. The BAL99E6327HTSA1 is supplied in a PG-SOT23 package for surface mounting and operates across a junction temperature range of -65°C to 150°C. This diode finds application in various electronic circuits, including switching power supplies and signal processing systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | PG-SOT23 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 70 V |
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