AIDW30S65C5XKSA1
DIODE SIL CARB 650V 30A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™ AIDW30S65C5XKSA1 is a 650 V, 30 A Silicon Carbide Schottky diode. This through-hole component, housed in a PG-TO247-3-41 package, offers a forward voltage of 1.7 V at 30 A and a reverse leakage current of 120 µA at 650 V. With a specified junction operating temperature range of -40°C to 175°C and an average rectified output current (Io) of 30 A, it features zero reverse recovery time (trr). The diode exhibits a capacitance of 860 pF at 1 V and 1 MHz. This component is qualified to AEC-Q100/101 standards, indicating its suitability for demanding automotive applications.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 860pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Qualification | AEC-Q100/101 |
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