AIDW20S65C5XKSA1
DIODE SIL CARB 650V 20A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™ AIDW20S65C5XKSA1 is a 650V, 20A Silicon Carbide Schottky diode in a PG-TO247-3-41 package. This through-hole component offers a maximum forward voltage (Vf) of 1.7V at 20A and a reverse leakage current of 120 µA at 650V. Featuring zero reverse recovery time for currents exceeding 500mA, it boasts a junction operating temperature range of -40°C to 175°C. The diode exhibits a capacitance of 584pF at 1V and 1MHz. Qualified to AEC-Q100/101 standards and designed for automotive applications, this SiC diode is suitable for demanding power electronics designs.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 584pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Qualification | AEC-Q100/101 |
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