AIDW16S65C5XKSA1
DIODE SIL CARB 650V 16A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™ Silicon Carbide Schottky Diode, part number AIDW16S65C5XKSA1. This automotive-grade diode features a 650V reverse voltage and a 16A average rectified current (Io). It utilizes Silicon Carbide technology, enabling a zero reverse recovery time (trr) for currents greater than 500mA. The forward voltage (Vf) is a maximum of 1.7V at 16A. Capacitance at 1V and 1MHz is 471pF, with a reverse leakage current of 90 µA at 650V. The component is housed in a PG-TO247-3-41 package for through-hole mounting. Operating junction temperature range is -40°C to 175°C. Qualified to AEC-Q100/101 standards, this diode is suitable for demanding applications in the electric vehicle and industrial power supply sectors.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 471pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Qualification | AEC-Q100/101 |
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