AIDW10S65C5XKSA1
DIODE SIL CARB 650V 10A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™ AIDW10S65C5XKSA1 is a 650V, 10A Silicon Carbide Schottky diode packaged in a PG-TO247-3-41 through-hole configuration. This device offers a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 60µA at its rated 650V. Featuring zero reverse recovery time for currents greater than 500mA (Io), it is engineered for demanding applications. The diode exhibits a capacitance of 303pF at 1V and 1MHz. Designed for high-performance power conversion, this AEC-Q100/101 qualified component is suitable for automotive and industrial sectors. It operates within a junction temperature range of -40°C to 175°C and is supplied in tube packaging.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 303pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Qualification | AEC-Q100/101 |
Request a Quote
Clients Also Buy
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
