AIDK16S65C5ATMA1
SIC_DISCRETE PG-TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™ AIDK16S65C5ATMA1 is a 650V, 16A Silicon Carbide Schottky diode packaged in a surface mount PG-TO263-2 (TO-263-3, D2PAK) configuration. This AEC-Q101 qualified component offers zero reverse recovery time, ideal for high-performance applications. Key electrical characteristics include a forward voltage (Vf) of 1.7V at 16A and a reverse leakage current of 90 µA at 650V. The junction operating temperature range is -40°C to 175°C. This diode is widely utilized in automotive power systems, electric vehicle charging, and industrial power supplies where efficiency and reliability are paramount. The AIDK16S65C5ATMA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 483pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Qualification | AEC-Q101 |
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