AIDK10S65C5ATMA1
DISCRETE DIODESManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™ AIDK10S65C5ATMA1 is a 650V, 10A Silicon Carbide (SiC) Schottky diode. This discrete diode, packaged in a PG-TO263-2 (TO-263AB) surface mount configuration, offers a forward voltage (Vf) of 1.7V maximum at 10A and a reverse leakage current of 60 µA at 650V. Featuring zero reverse recovery time, this AEC-Q101 qualified component is engineered for high-performance applications. Its operating junction temperature range is -40°C to 175°C. The capacitance at 1V and 1MHz is 303pF. This device is suitable for demanding automotive power electronics and industrial applications where efficiency and reliability are paramount. The AIDK10S65C5ATMA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 303pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Qualification | AEC-Q101 |
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