SMBTA64E6327
TRANS PNP DARL 30V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies SMBTA64E6327 is a PNP Darlington bipolar junction transistor designed for surface mount applications. This component features a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. It offers a substantial minimum DC current gain (hFE) of 20000 at 100mA and 5V, with a Vce saturation of 1.5V at 100µA and 100mA. The device operates with a transition frequency of 125MHz and a maximum power dissipation of 330mW. The SMBTA64E6327 is packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel. Typical applications include switching and amplification circuits in consumer electronics and industrial control systems. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 330 mW |
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