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SMBTA14E6327HTSA1

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SMBTA14E6327HTSA1

TRANS NPN DARL 30V 0.3A SOT-23

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies SMBTA14E6327HTSA1 is an NPN Darlington bipolar junction transistor designed for surface mount applications within the PG-SOT23 package. This component offers a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 300 mA. It features a high DC current gain (hFE) of 20000 minimum at 100 mA and 5 V, with a transition frequency of 125 MHz. The device dissipates a maximum power of 330 mW and operates at temperatures up to 150°C. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems. The part is supplied on a Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackagePG-SOT23
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max330 mW

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