SMBTA 42 E6433
TRANS NPN 300V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor (BJT), part number SMBTA-42-E6433, is designed for surface mount applications in a PG-SOT23 package. This component offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA. It features a transition frequency of 70MHz and a maximum power dissipation of 360mW. The minimum DC current gain (hFE) is 40 at 30mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 500mV at 2mA base current and 20mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is suitable for use in industrial and consumer electronics applications where robust switching and amplification are required. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 360 mW |
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