SMBT 3906 E6767
TRANS PNP 40V 0.2A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies' SMBT-3906-E6767 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 40V collector-emitter breakdown voltage and a maximum collector current of 200 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 330 mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10 mA collector current and 1V Vce. It is supplied in a PG-SOT23 package, facilitating surface mounting. The maximum collector emitter saturation voltage is specified at 400mV at 5mA base current and 50mA collector current. This component is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 330 mW |
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