PZTA42E6327HTSA1
TRANS NPN 300V 0.5A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies' PZTA42E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This surface mount component, housed in a PG-SOT223-4 package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA. It features a transition frequency of 70MHz and a maximum power dissipation of 1.5W. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 30mA and 10V, and a Vce saturation of 500mV at 2mA/20mA. The device exhibits a low collector cutoff current of 100nA (ICBO) and operates within a temperature range of -55°C to 150°C. This component is frequently utilized in industrial automation, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.5 W |