MMBTA14LT1HTSA1
TRANS NPN DARL 30V 0.3A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
Quality Control: Learn More
Infineon Technologies MMBTA14LT1HTSA1 is a surface-mount NPN Darlington bipolar junction transistor. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 300mA. It offers a high DC current gain (hFE) of 20000 minimum at 100mA, 5V, and a transition frequency of 125MHz. The transistor has a maximum power dissipation of 330mW and an operating junction temperature of 150°C. The MMBTA14LT1HTSA1 is supplied in a PG-SOT23 package and is available on tape and reel. This device is suitable for applications in power management and general-purpose amplification, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 330 mW |