MMBT3904LT3XT
TRANS NPN 40V 0.2A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies MMBT3904LT3XT is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 200mA. The transition frequency is rated at 300MHz, and the maximum power dissipation is 330mW. It is supplied in the PG-SOT23 surface mount package, presented on tape and reel for automated assembly. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA/1V and a maximum collector-emitter saturation voltage of 300mV at 5mA/50mA. The collector cutoff current (ICBO) is specified at a maximum of 50nA. This component finds application in the automotive and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 330 mW |
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