BSP62E6327HTSA1
TRANS PNP DARL 80V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BSP62E6327HTSA1 is a PNP Darlington bipolar transistor designed for high-gain applications. This component features a collector current rating of 1A and a collector-emitter breakdown voltage of 80V. With a transition frequency of 200MHz and a maximum power dissipation of 1.5W, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 2000 at 500mA and 10V. It is supplied in a PG-SOT223-4 package, facilitating surface mounting. The Vce(sat) is specified at a maximum of 1.8V under 1mA base current and 1A collector current. This transistor finds application in industrial automation, power management, and general purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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