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BSP60E6327HTSA1

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BSP60E6327HTSA1

TRANS PNP DARL 45V 1A SOT223-4

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies' BSP60E6327HTSA1 is a PNP Darlington bipolar junction transistor designed for demanding applications. This component offers a 45V collector-emitter breakdown voltage and a maximum collector current of 1A. Featuring a high DC current gain of 2000 at 500mA and 10V, it ensures efficient signal amplification. The 200MHz transition frequency supports medium-speed switching operations. With a maximum power dissipation of 1.5W and an operating temperature range up to 150°C, it is suitable for industrial automation and power management systems. The device is supplied in the PG-SOT223-4 package, facilitating surface mounting.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Frequency - Transition200MHz
Supplier Device PackagePG-SOT223-4
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max1.5 W

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