BSP51H6327XTSA1
TRANS NPN DARL 60V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BSP51H6327XTSA1 is an NPN Darlington bipolar transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 1A. The high DC current gain, rated at a minimum of 2000 at 500mA and 10V, ensures efficient amplification. With a transition frequency of 200MHz and a maximum power dissipation of 1.5W, this transistor is suitable for power switching and amplification circuits. It features a low saturation voltage of 1.8V at 1mA base current and 1A collector current, minimizing power loss. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in the PG-SOT223-4 package, a TO-261-4, TO-261AA equivalent, presented on tape and reel. This component finds utility across various industries including industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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