BSP 52 E6327
TRANS NPN DARL 80V 1A SOT-223Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Darlington Bipolar Junction Transistor, part number BSP-52-E6327. This device offers an 80V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. It features a high DC current gain (hFE) of 2000 minimum at 500mA and 10V, with a saturation voltage of 1.8V maximum at 1mA base current and 1A collector current. The transition frequency is rated at 200MHz, and it can dissipate up to 1.5W of power. Packaged in a PG-SOT223-4 surface mount configuration, this component is suitable for applications in industrial and automotive sectors requiring efficient switching and amplification. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |