BSP 51 E6327
TRANS NPN DARL 60V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies' BSP-51-E6327 is an NPN Darlington bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. It exhibits a minimum DC current gain (hFE) of 2000 at 500mA and 10V, with a transition frequency of 200MHz. The device dissipates a maximum power of 1.5W and operates at junction temperatures up to 150°C. Packaged in a PG-SOT223-4 (TO-261-4, TO-261AA) format, this transistor is suitable for use in industrial automation, power management, and lighting control systems. The Vce saturation is specified at a maximum of 1.8V at 1mA base current and 1A collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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