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BFN39H6327XTSA1

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BFN39H6327XTSA1

TRANS PNP 300V 0.2A SOT223-4

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies' BFN39H6327XTSA1 is a PNP bipolar junction transistor designed for demanding applications. This component features a 300V collector-emitter breakdown voltage and a maximum collector current of 200mA, with a power dissipation capability of 1.5W. The transition frequency is specified at 100MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 30mA and 10V, and a Vce saturation of 500mV at 2mA collector current and 20mA base current. The collector cutoff current (ICBO) is a maximum of 100nA. It is supplied in the PG-SOT223-4 package, a surface-mount solution, and is delivered on tape and reel. This transistor is suitable for use in industrial control systems and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 10V
Frequency - Transition100MHz
Supplier Device PackagePG-SOT223-4
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1.5 W

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