BFN38E6327HTSA1
TRANS NPN 300V 0.2A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BFN38E6327HTSA1, is designed for high-voltage applications. This transistor features a 300V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 70MHz and a power dissipation of 1.5W, it is suitable for power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 30 at 30mA collector current and 10V collector-emitter voltage, and a saturation voltage of 500mV at 2mA base current and 20mA collector current. The BFN38E6327HTSA1 is supplied in a PG-SOT223-4 package, facilitating surface mounting. Key electrical characteristics include a maximum collector cutoff current of 100nA and an operating junction temperature of up to 150°C. This component finds utility in industrial automation and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.5 W |
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