BFN26E6433HTMA1
TRANS NPN 300V 0.2A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BFN26E6433HTMA1 is a bipolar junction transistor (BJT) with an NPN configuration. This component offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 200mA. It features a minimum DC current gain (hFE) of 30 at 30mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 500mV at 2mA base current and 20mA collector current. The transition frequency is specified at 70MHz. Designed for surface mounting, this transistor is housed in a PG-SOT23 package, also known as TO-236-3 or SC-59. The maximum power dissipation is 360mW, and it operates at temperatures up to 150°C (TJ). This device is suitable for applications in industrial and automotive sectors. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 360 mW |
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