BFN19H6327XTSA1
TRANS PNP 300V 0.2A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BFN19H6327XTSA1 is a PNP bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 200mA. With a transition frequency of 100MHz and a maximum power dissipation of 1W, it is suitable for use in automotive systems requiring reliable performance. The DC current gain (hFE) is a minimum of 30 at 30mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV under 2mA base current and 20mA collector current conditions. The device exhibits a low collector cutoff current of 100nA (ICBO). Qualified to AEC-Q101 standards, this transistor is supplied in a PG-SOT89 package (TO-243AA) and is available on tape and reel. It operates within an extended temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
| Qualification | AEC-Q101 |
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