BFN18H6327XTSA1
TRANS NPN 300V 0.2A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BFN18H6327XTSA1 is an NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 200mA, with a maximum power dissipation of 1.5W. The transistor exhibits a transition frequency of 70MHz and a minimum DC current gain (hFE) of 30 at 30mA and 10V. It offers a Vce(sat) of 500mV at 2mA/20mA. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. Packaged in a PG-SOT89 (TO-243AA) surface-mount format, it is supplied on tape and reel. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.5 W |
| Qualification | AEC-Q101 |
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