BFN18E6327HTSA1
TRANS NPN 300V 0.2A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BFN18E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 300V and a maximum collector current of 200mA. With a transition frequency of 70MHz, it is suitable for a range of switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 30 at 30mA collector current and 10V Vce. Maximum collector emitter saturation voltage is specified at 500mV for a 2mA base current driving 20mA collector current. Operating at junction temperatures up to 150°C, this transistor is provided in a PG-SOT89 package, supplied on tape and reel. Its specifications make it applicable in power supply circuits and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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