BFN 19 E6327
TRANS PNP 300V 0.2A SOT-89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor (BJT) BFN-19-E6327, packaged in a PG-SOT89 (TO-243AA), offers a 300V collector-emitter breakdown voltage and a continuous collector current capability of 200mA. This device features a transition frequency of 100MHz and a maximum power dissipation of 1W. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 30mA/10V and a Vce saturation of 500mV at 2mA/20mA. The device exhibits a low collector cutoff current (ICBO) of 100nA and is rated for operation up to a junction temperature of 150°C. This component is commonly utilized in power management and general-purpose switching applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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