BDP954E6327HTSA1
TRANS PNP 100V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP954E6327HTSA1 is a PNP bipolar junction transistor designed for general purpose applications. This component features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce) of 100 V. With a transition frequency of 100 MHz and a maximum power dissipation of 5 W, it is suitable for use in power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 85 at 500 mA and 1 V. It is offered in a PG-SOT223-4-10 surface mount package, facilitating integration into compact board designs. The operating temperature range is up to 150°C (TJ). This transistor is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 5 W |
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