BDP953E6327HTSA1
TRANS NPN 100V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP953E6327HTSA1 is a high-performance NPN bipolar junction transistor designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 5W. The transition frequency is rated at 100MHz, making it suitable for signal amplification and switching in various electronic circuits. The BDP953E6327HTSA1 is supplied in a PG-SOT223-4-10 surface-mount package, facilitating efficient board assembly. Its low collector cutoff current of 100nA (ICBO) and a minimum DC current gain (hFE) of 100 at 500mA and 1V ensure reliable operation across a range of conditions. The saturation voltage at 2A collector current is a maximum of 500mV at 200mA base current. This transistor is commonly utilized in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 5 W |
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