BDP949E6327HTSA1
TRANS NPN 60V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP949E6327HTSA1 is an NPN bipolar junction transistor designed for surface-mount applications within the TO-261-4 (PG-SOT223-4-10) package. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 3A, with a maximum power dissipation of 5W. It features a transition frequency of 100MHz and a minimum DC current gain (hFE) of 100 at 500mA collector current and 1V collector-emitter voltage. Key parameters include a saturation voltage (Vce(sat)) of 500mV at 200mA collector current and 2A collector current, and a collector cutoff current (ICBO) of 100nA. The operating junction temperature range extends to 150°C. This transistor is utilized in various industrial and consumer electronics applications requiring robust switching and amplification capabilities. The BDP949E6327HTSA1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
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