BDP948E6433HTMA1
TRANS PNP 45V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP948E6433HTMA1 is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 3A, with a maximum power dissipation of 5W. The transistor exhibits a transition frequency of 100MHz, making it suitable for various signal amplification and switching tasks. It is supplied in a PG-SOT223-4 package (TO-261-4, TO-261AA) for surface mounting, and is delivered on tape and reel. Key specifications include a low collector cutoff current of 100nA (ICBO) and a minimum DC current gain (hFE) of 85 at 500mA and 1V. The Vce saturation is specified at a maximum of 500mV when operating at 200mA base current and 2A collector current. This device finds application in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 5 W |
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