BDP948E6327HTSA1
TRANS PNP 45V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP948E6327HTSA1 is a PNP bipolar junction transistor designed for robust performance. This component offers a collector-emitter breakdown voltage (Vce) of 45V and a continuous collector current (Ic) capability of up to 3A. It features a transition frequency (fT) of 100MHz and a maximum power dissipation of 5W. The DC current gain (hFE) is specified as a minimum of 85 at 500mA and 1V. Vce(sat) is characterized at a maximum of 500mV with an operating point of 200mA collector current and 20mA base current. The collector cutoff current (ICBO) is a nominal 100nA. Designed for surface mounting, this transistor is supplied in the PG-SOT223-4-10 package. It is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 5 W |