BDP947E6327HTSA1
TRANS NPN 45V 3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BDP947E6327HTSA1 is a bipolar NPN transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 3A. The DC current gain (hFE) is a minimum of 100 at 500mA and 1V. With a transition frequency of 100MHz and a maximum power dissipation of 5W, it is suitable for general-purpose amplification and switching. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for an input current of 200mA and an output current of 2A. The transistor exhibits a collector cutoff current (ICBO) of 100nA. It operates within a temperature range of 150°C. The device is supplied in a PG-SOT223-4-10 package, presented on a tape and reel. This component finds application in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT223-4-10 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 5 W |