BCX6925H6327XTSA1
TRANS PNP 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor, part number BCX6925H6327XTSA1. This device features a collector-emitter breakdown voltage of 20V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 3W, it is suitable for demanding applications. The minimum DC current gain (hFE) is specified at 160 at 500mA and 1V. The transistor exhibits a Vce(sat) of 500mV at 100mA/1A. Designed for surface mounting within a PG-SOT89 package, this component operates across a temperature range of 150°C. It is AEC-Q101 qualified, making it appropriate for automotive applications. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
| Qualification | AEC-Q101 |
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