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BCX6925E6327HTSA1

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BCX6925E6327HTSA1

TRANS PNP 20V 1A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies PNP Bipolar Junction Transistor, part number BCX6925E6327HTSA1. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a power dissipation of 3W, it is suitable for applications requiring moderate current handling and switching speeds. The transistor exhibits a minimum DC current gain (hFE) of 160 at 500mA and 1V. Collector cutoff current is a maximum of 100nA (ICBO). Saturation voltage (Vce Sat) is specified at 500mV maximum for an Ic of 1A driven by 100mA. The BCX6925E6327HTSA1 is housed in a PG-SOT89 (TO-243AA) surface mount package and operates at temperatures up to 150°C (TJ). It is supplied in Tape & Reel packaging. This component finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA, 1V
Frequency - Transition100MHz
Supplier Device PackagePG-SOT89
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max3 W

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