BCX6910E6327HTSA1
TRANS PNP 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX6910E6327HTSA1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current (Ic) capability of up to 1A and a collector-emitter breakdown voltage (Vce(max)) of 20V. The minimum DC current gain (hFE) is specified at 85 at 500mA and 1V. With a transition frequency of 100MHz, it is suitable for moderate frequency circuits. The device exhibits a Vce(sat) of 500mV at 100mA collector current and 1A collector current. The maximum power dissipation is 3W. This transistor is housed in a PG-SOT89 package, suitable for surface mounting. It is supplied on a Tape & Reel (TR) for automated assembly. The operating junction temperature range is up to 150°C. This component finds application in various industrial and consumer electronics requiring reliable bipolar transistor performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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