BCX6825H6327XTSA1
TRANS NPN 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX6825H6327XTSA1 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a power dissipation capability of 3W, it is suitable for high-frequency switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 160 at 500mA collector current and 1V collector-emitter voltage. Saturation voltage is specified at a maximum of 500mV at 100mA base current and 1A collector current. Qualifying for AEC-Q101, this transistor is intended for automotive environments. It is supplied in a PG-SOT89 package (TO-243AA) and is available on tape and reel for automated assembly. Applications include power management and signal conditioning within automotive electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
| Qualification | AEC-Q101 |
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