BCX6825E6327HTSA1
TRANS NPN 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCX6825E6327HTSA1. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 3W, it is suitable for applications requiring moderate switching speeds and power handling. The minimum DC current gain (hFE) is 160 at 500mA and 1V. Saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is housed in a PG-SOT89 (TO-243AA) package for surface mounting and operates at temperatures up to 150°C (TJ). It is supplied on a tape and reel. This transistor finds application in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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