BCX6816H6327XTSA1
TRANS NPN 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX6816H6327XTSA1 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 3W. The DC current gain (hFE) is a minimum of 100 at 500mA and 1V. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for an operating point of 100mA collector current and 100mA base current. The device exhibits a low collector cutoff current (ICBO) of 100nA. Qualified to AEC-Q101 standards and possessing an automotive grade, this transistor is suitable for use in automotive electronics and industrial control systems. It is supplied in a PG-SOT89 package, suitable for surface mounting and delivered on tape and reel. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
| Qualification | AEC-Q101 |
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