BCX6816E6327HTSA1
TRANS NPN 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BCX6816E6327HTSA1, offers a 20V collector-emitter breakdown voltage and a 1A maximum collector current. This device features a guaranteed minimum DC current gain (hFE) of 100 at 500mA and 1V, with a transition frequency of 100MHz. The transistor type is NPN, and it dissipates a maximum power of 3W. Saturation voltage (Vce(sat)) is specified at 500mV maximum for an operating point of 100mA collector current and 100mA base current. Its collector cutoff current (Icbo) is a maximum of 100nA. The component is housed in a PG-SOT89 package, suitable for surface mounting, and is supplied on a tape and reel. This transistor is utilized in various industrial applications, including power management and general-purpose switching. Operating temperature range extends up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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