BCX6810E6327HTSA1
TRANS NPN 20V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX6810E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage of 20 V and a maximum collector current of 1 A. With a transition frequency of 100 MHz and a maximum power dissipation of 3 W, it is suitable for amplification and switching functions. The transistor exhibits a minimum DC current gain (hFE) of 85 at 500 mA and 1 V, and a saturation voltage (Vce Sat) of 500 mV at 100 mA and 1 A. The maximum collector cutoff current is 100 nA. Housed in a PG-SOT89 package and supplied on tape and reel, this component is designed for surface mounting and operates at junction temperatures up to 150°C. Applications include power management and signal conditioning in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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