BCX56E6327HTSA1
TRANS NPN 80V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX56E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 2W. The device is supplied in the PG-SOT89 package. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a Vce saturation of up to 500mV at 50mA and 500mA. The collector cutoff current is specified at a maximum of 100nA (ICBO). This transistor is suitable for use in power management and general-purpose amplification circuits across various industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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