BCX5616E6327HTSA1
TRANS NPN 80V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5616E6327HTSA1 is an NPN bipolar junction transistor designed for robust performance. This component features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A, with a maximum collector cutoff current of 100 nA. It offers a minimum DC current gain (hFE) of 100 at 150 mA and 2 V, and a transition frequency of 100 MHz. The device dissipates a maximum power of 2 W.
The BCX5616E6327HTSA1 is housed in a PG-SOT89 package (TO-243AA) for surface mounting, supplied on tape and reel. Its saturation voltage (Vce) at 50 mA base current and 500 mA collector current is a maximum of 500 mV. This transistor is suitable for applications in industrial and consumer electronics, automotive systems, and power management circuits where reliable amplification and switching are critical. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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