BCX5610H6327XTSA1
TRANS NPN 80V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5610H6327XTSA1 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 2W and a transition frequency of 100MHz, it is suitable for various switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 63 at 150mA and 2V, with a saturation voltage (Vce Sat) of 500mV at 50mA and 500mA. Its low collector cutoff current is rated at 100nA. Manufactured to AEC-Q101 automotive standards, this transistor is packaged in a PG-SOT89 (TO-243AA) surface-mount configuration, supplied on tape and reel. It is commonly utilized in automotive systems and industrial control applications requiring robust semiconductor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | AEC-Q101 |
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