BCX55E6327HTSA1
TRANS NPN 60V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX55E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for efficient switching and amplification applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. With a power dissipation capability of 2W and a transition frequency of 100MHz, it is well-suited for use in industrial control, automotive electronics, and general-purpose signal processing. The minimum DC current gain (hFE) is 40 at 150mA and 2V, with a Vce saturation of 500mV at 50mA and 500mA. Packaged in a PG-SOT89 (TO-243AA) for surface mounting, and supplied on tape and reel, the BCX55E6327HTSA1 offers a maximum junction temperature of 150°C. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |