BCX5516E6433HTMA1
TRANS NPN 60V 1A SOT89Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BCX5516E6433HTMA1 is an NPN bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A, with a power dissipation capability of 2W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a transition frequency of 100MHz. Saturation voltage is specified at a maximum of 500mV with 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is limited to 100nA. The device is supplied in a PG-SOT89 package, presented on a tape and reel. This transistor is suitable for applications in power management, general-purpose amplification, and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT89 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |