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BCX5516E6433HTMA1

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BCX5516E6433HTMA1

TRANS NPN 60V 1A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCX5516E6433HTMA1 is an NPN bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A, with a power dissipation capability of 2W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a transition frequency of 100MHz. Saturation voltage is specified at a maximum of 500mV with 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is limited to 100nA. The device is supplied in a PG-SOT89 package, presented on a tape and reel. This transistor is suitable for applications in power management, general-purpose amplification, and switching circuits within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition100MHz
Supplier Device PackagePG-SOT89
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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