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BCX5416H6327XTSA1

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BCX5416H6327XTSA1

TRANS NPN 45V 1A SOT89

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Infineon Technologies BCX5416H6327XTSA1 is a high-performance NPN bipolar transistor designed for demanding applications. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 1A, delivering robust performance in power management and signal amplification circuits. With a transition frequency of 100MHz and a power dissipation capability of 2W, it is well-suited for use in automotive electronics, industrial control systems, and general purpose amplification. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 2V, ensuring efficient amplification. Packaged in a PG-SOT89 (TO-243AA) surface mount configuration and qualified to AEC-Q101 standards, the BCX5416H6327XTSA1 offers reliability and ease of integration into automated assembly processes. Its low collector cutoff current of 100nA (ICBO) and a saturation voltage of 500mV at 50mA/500mA contribute to efficient operation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition100MHz
Supplier Device PackagePG-SOT89
GradeAutomotive
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max2 W
QualificationAEC-Q101

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